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特点
•供电：1.35V~5.5V
.
•Low
Ib:
0.1pA
•Low
Iq:
320nA/Channel.
•Low
Ios: 0.1pA
•Input
and output rail to rail
•GBP:
30KHz
•Low
noise: 3.6 µVRMS
•Vos:
1.3mV(Max.) 90µV(Typ.)
封装
•8-pin DFN. (1.2mm x 1.6mm x 0.37mm)
•8-pin DFN. (2mm x 2mm x 0.75mm)
•8-pin MSOP. (4mm x 3.9mm x 0.95mm)
